Name: CGD65B130SH2
Brand: Cambridge GaN Devices
SKU: 4768-CGD65B130SH2TR-ND
Price: 7.1 USD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CGD65B130SH2
DigiKey Part Number	4768-CGD65B130SH2TR-ND - Tape & Reel (TR) 4768-CGD65B130SH2CT-ND - Cut Tape (CT) 4768-CGD65B130SH2DKR-ND - Digi-Reel®
Manufacturer	Cambridge GaN Devices
Manufacturer Product Number	CGD65B130SH2
Description	650V GAN HEMT, 130MOHM, DFN5X6.
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 12A Surface Mount 8-DFN (5x6)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	12A
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs	1.9 nC @ 12 V
Vgs (Max)	+20V, -1V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (5x6)
Package / Case	8-PowerVDFN