Name: DMN6013LFGQ-7
Brand: Diodes Incorporated
SKU: DMN6013LFGQ-7DITR-ND
Price: 1.05 USD
Availability: OutOfStock

DMN6013LFGQ-7 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Diodes Incorporated

In Stock: 0

Unit Price: $0.46175

Parametric Equivalent

Diodes Incorporated

In Stock: 0

Unit Price: $1.46000

Parametric Equivalent

Diodes Incorporated

In Stock: 0

Unit Price: $0.52788

Similar

Alpha & Omega Semiconductor Inc.

In Stock: 0

Unit Price: $0.33375

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMN6013LFGQ-7
DigiKey Part Number	DMN6013LFGQ-7DITR-ND - Tape & Reel (TR) DMN6013LFGQ-7DICT-ND - Cut Tape (CT) DMN6013LFGQ-7DIDKR-ND - Digi-Reel®
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMN6013LFGQ-7
Description	MOSFET N-CH 60V 10.3A PWRDI3333
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 10.3A (Ta), 45A (Tc) 1W (Ta) Surface Mount POWERDI3333-8
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diodes Incorporated
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	10.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2577 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	POWERDI3333-8
Package / Case	8-PowerVDFN
Base Product Number	DMN6013