Name: IMW65R026M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW65R026M2HXKSA1-ND
Price: 12.35 USD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMW65R026M2HXKSA1
DigiKey Part Number	448-IMW65R026M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW65R026M2HXKSA1
Description	IMW65R026M2HXKSA1
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 64A (Tc) 227W (Tc) Through Hole PG-TO247-3-40
Datasheet	Datasheet
EDA/CAD Models	IMW65R026M2HXKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	24mOhm @ 34.5A, 20V
Vgs(th) (Max) @ Id	5.6V @ 7mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	1499 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-40
Package / Case	TO-247-3