IPB039N10N3GE8187ATMA1 Infineon | Single

IPB039N10N3GE8187ATMA1 is Obsolete and no longer manufactured.

Available Substitutes:

Parametric Equivalent

Infineon Technologies

In Stock: 0

Unit Price: $2.73000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPB039N10N3GE8187ATMA1
DigiKey Part Number	IPB039N10N3GE8187ATMA1TR-ND - Tape & Reel (TR)
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB039N10N3GE8187ATMA1
Description	MOSFET N-CH 100V 160A TO263-7
Customer Reference
Detailed Description	N-Channel 100 V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number	IPB039