Name: IQE006NE2LM5SCATMA1
Brand: Infineon Technologies
SKU: 448-IQE006NE2LM5SCATMA1TR-ND
Price: 2.79 USD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQE006NE2LM5SCATMA1
DigiKey Part Number	448-IQE006NE2LM5SCATMA1TR-ND - Tape & Reel (TR) 448-IQE006NE2LM5SCATMA1CT-ND - Cut Tape (CT) 448-IQE006NE2LM5SCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQE006NE2LM5SCATMA1
Description	OPTIMOS LOWVOLTAGE POWER MOSFET
Manufacturer Standard Lead Time	14 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 47A (Ta), 310A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHSON-8-1
Datasheet	Datasheet
EDA/CAD Models	IQE006NE2LM5SCATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	47A (Ta), 310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-WHSON-8-1
Package / Case	8-PowerWDFN