PG-TO220-FP
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPAN60R650CEXKSA1

DigiKey Part Number
IPAN60R650CEXKSA1-ND
Manufacturer
Manufacturer Product Number
IPAN60R650CEXKSA1
Description
MOSFET N-CH 600V 9.9A TO220
Customer Reference
Detailed Description
N-Channel 600 V 9.9A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet
 Datasheet
EDA/CAD Models
IPAN60R650CEXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
Base Product Number
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Obsolete
Marketplace Stock: 691 View Now
This product is no longer manufactured.

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691In Stock
Ships from Rochester Electronics, LLC