Name: SCT3120ALGC11
Brand: Rohm Semiconductor
SKU: SCT3120ALGC11-ND
Price: 9.77 USD
Availability: OutOfStock

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SCT3120ALGC11
DigiKey Part Number	SCT3120ALGC11-ND
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	SCT3120ALGC11
Description	SICFET N-CH 650V 21A TO247N
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N
Datasheet	Datasheet
EDA/CAD Models	SCT3120ALGC11 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id	5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	103W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3
Base Product Number	SCT3120

SCT3120ALGC11