Name: TK11S10N1L,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK11S10N1LLXHQTR-ND
Price: 0.93 USD
Availability: OutOfStock

TK11S10N1L,LXHQ is out of stock and can be placed on backorder.

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Parametric Equivalent

TK11S10N1L,LQ

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: $0.91000

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK11S10N1L,LXHQ
DigiKey Part Number	264-TK11S10N1LLXHQTR-ND - Tape & Reel (TR) 264-TK11S10N1LLXHQCT-ND - Cut Tape (CT) 264-TK11S10N1LLXHQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK11S10N1L,LXHQ
Description	MOSFET N-CH 100V 11A DPAK
Manufacturer Standard Lead Time	74 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 11A (Ta) 65W (Tc) Surface Mount DPAK+
Datasheet	Datasheet
EDA/CAD Models	TK11S10N1L,LXHQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	65W (Tc)
Operating Temperature	175°C
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	TK11S10