Name: TK35N65W,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK35N65WS1F-ND
Price: 10.07 USD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK35N65W,S1F
DigiKey Part Number	TK35N65WS1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK35N65W,S1F
Description	MOSFET N-CH 650V 35A TO247
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
Datasheet	Datasheet
EDA/CAD Models	TK35N65W,S1F Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Base Product Number	TK35N65