TK50P04M1(T6RSS-Q) Toshiba | Single

TK50P04M1(T6RSS-Q) is Obsolete and no longer manufactured.

Available Substitutes:

Similar

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: $1.55000

Similar

onsemi

In Stock: 62

Unit Price: $1.91000

Similar

STMicroelectronics

In Stock: 2,500

Unit Price: $1.09000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK50P04M1(T6RSS-Q)
DigiKey Part Number	TK50P04M1(T6RSSQ)TR-ND - Tape & Reel (TR) TK50P04M1(T6RSSQ)CT-ND - Cut Tape (CT) TK50P04M1(T6RSSQ)DKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK50P04M1(T6RSS-Q)
Description	MOSFET N-CH 40V 50A DP
Customer Reference
Detailed Description	N-Channel 40 V 50A (Ta) 60W (Tc) Surface Mount DPAK
Datasheet	Datasheet
EDA/CAD Models	TK50P04M1(T6RSS-Q) Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	TK50P04