Name: TK65E10N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK65E10N1S1X-ND
Price: 3.57 USD
Availability: OutOfStock

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TK65E10N1,S1X
DigiKey Part Number	TK65E10N1S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK65E10N1,S1X
Description	MOSFET N CH 100V 148A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 148A (Ta) 192W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK65E10N1,S1X Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	148A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	192W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK65E10

TK65E10N1,S1X