Name: TK6Q65W,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: TK6Q65WS1Q-ND
Price: 2.21 USD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK6Q65W,S1Q
DigiKey Part Number	TK6Q65WS1Q-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK6Q65W,S1Q
Description	MOSFET N-CH 650V 5.8A IPAK
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 5.8A (Ta) 60W (Tc) Through Hole IPAK
Datasheet	Datasheet
EDA/CAD Models	TK6Q65W,S1Q Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	IPAK
Package / Case	TO-251-3 Stub Leads, IPAK
Base Product Number	TK6Q65