TK125N60Z1,S1F
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK125N60Z1,S1F
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW015N65C,S1F

DigiKey Part Number
264-TW015N65CS1F-ND
Manufacturer
Manufacturer Product Number
TW015N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 15MOH
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 100A (Tc) 342W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
21mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs
128 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
4850 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
342W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

0 In Stock
Check Lead Time
Request Stock Notification
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$59.60000$59.60
30$49.33200$1,479.96
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.