SI2315BDS-T1-GE3 Vishay | Single

SI2315BDS-T1-GE3 is Obsolete and no longer manufactured.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2315BDS-T1-GE3
DigiKey Part Number	SI2315BDS-T1-GE3TR-ND - Tape & Reel (TR) SI2315BDS-T1-GE3CT-ND - Cut Tape (CT) SI2315BDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2315BDS-T1-GE3
Description	MOSFET P-CH 12V 3A SOT23-3
Customer Reference
Detailed Description	P-Channel 12 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	715 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2315