Name: SI4630DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4630DY-T1-E3TR-ND
Price: 2.56 USD
Availability: OutOfStock

SI4630DY-T1-E3 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Vishay Siliconix

In Stock: 0

Unit Price: $2.59000

Similar

Rohm Semiconductor

In Stock: 0

Unit Price: $1.95000

Similar

Rohm Semiconductor

In Stock: 750

Unit Price: $1.72000

Similar

Rohm Semiconductor

In Stock: 0

Unit Price: $1.19000

Similar

Rohm Semiconductor

In Stock: 0

Unit Price: $1.49000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI4630DY-T1-E3
DigiKey Part Number	SI4630DY-T1-E3TR-ND - Tape & Reel (TR) SI4630DY-T1-E3CT-ND - Cut Tape (CT) SI4630DY-T1-E3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4630DY-T1-E3
Description	MOSFET N-CH 25V 40A 8SO
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet
EDA/CAD Models	SI4630DY-T1-E3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	161 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	6670 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Base Product Number	SI4630