TO-263-3
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TO-263-3
TO-263-3

SIHB25N50E-GE3

DigiKey Part Number
742-SIHB25N50E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB25N50E-GE3
Description
MOSFET N-CH 500V 26A TO263
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 500 V 26A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1980 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB25
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Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$3.78000$3.78
10$2.54000$25.40
100$1.80540$180.54
500$1.77702$888.51
1,000$1.65848$1,658.48
2,000$1.63500$3,270.00
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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