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SIHP050N60E-GE3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP28N65E-GE3

DigiKey Part Number
SIHP28N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP28N65E-GE3
Description
MOSFET N-CH 650V 29A TO220AB
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 29A (Tc) 250W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP28N65E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
112mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3405 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

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Available To Order
Check Lead Time
This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
All prices are in USD
Tube
QuantityUnit PriceExt Price
1,000$2.39750$2,397.50
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.