Name: SIR626LDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR626LDP-T1-RE3TR-ND
Price: 2.04 USD
Availability: OutOfStock

SIR626LDP-T1-RE3 is out of stock and can be placed on backorder.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIR626LDP-T1-RE3
DigiKey Part Number	SIR626LDP-T1-RE3TR-ND - Tape & Reel (TR) SIR626LDP-T1-RE3CT-ND - Cut Tape (CT) SIR626LDP-T1-RE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIR626LDP-T1-RE3
Description	MOSFET N-CH 60V 45.6A/186A PPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SIR626LDP-T1-RE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5900 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SIR626