Name: SIS407ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS407ADN-T1-GE3TR-ND
Price: 0.68 USD
Availability: OutOfStock

SIS407ADN-T1-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Rohm Semiconductor

In Stock: 427

Unit Price: $0.61000

Similar

Rohm Semiconductor

In Stock: 0

Unit Price: $0.42903

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS407ADN-T1-GE3
DigiKey Part Number	SIS407ADN-T1-GE3TR-ND - Tape & Reel (TR) SIS407ADN-T1-GE3CT-ND - Cut Tape (CT) SIS407ADN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS407ADN-T1-GE3
Description	MOSFET P-CH 20V 18A PPAK1212-8
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	168 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	5875 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 39.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
Base Product Number	SIS407