Name: SIS862ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS862ADN-T1-GE3TR-ND
Price: 0.75 USD
Availability: OutOfStock

SIS862ADN-T1-GE3 is out of stock and can be placed on backorder.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS862ADN-T1-GE3
DigiKey Part Number	SIS862ADN-T1-GE3TR-ND - Tape & Reel (TR) SIS862ADN-T1-GE3CT-ND - Cut Tape (CT) SIS862ADN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS862ADN-T1-GE3
Description	MOSFET N-CH 60V 15.8A/52A PPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 15.8A (Ta), 52A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SIS862ADN-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1235 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
Base Product Number	SIS862